MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form [1]

a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below).

GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.

Our single crystal GeAs (Germanium arsenide) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using

Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21

石墨烯-HIPS（高抗冲聚苯乙烯）长丝是由Graphene 3D Lab制造的产品，是一种高科技工程FDM材料，增强了石墨烯填料，可实现高精度3D打印。该长丝是半柔性的，具有高抗冲击性。它还具有改进的层间粘合性，为3D打印物体提供了出色的机械性能。 用作托盘基质的HIPS（高抗冲聚苯乙烯）聚合物是弹性，坚韧的聚合物。石墨烯纳米片用作填料，通过增加其拉伸强度，抗冲击性和耐磨性来增强长丝的机械性能。