Single crystal ReSxSe2(1-x) alloy rystals are developed at our facilities using chemical vapor transport or flux zone technique methods.
1.将单层硫化钼转移至衬底(衬底可根据客户需求选定)$n2.边长15um (三角形)片内层数均匀$n3.衬底上转移3个(数量可定制)带电极的单层硫化钼样品$n4.电极间距:~5um
CVD石墨烯CVD六方氮化硼异质结 石墨烯/h-BN薄膜的性质: 单层h-BN薄膜上的单层石墨烯薄膜转移到285nm(p掺杂)SiO2/Si晶片上 尺寸:1cmx1cm; 4片装 每个薄膜的厚度和质量由拉曼光谱控制 该产品的覆盖率约为98% 薄膜是连续的,有小孔和有机残留物 高结晶质量 石墨烯薄膜预先单层(超过95%),偶尔有少量多层(双层小于5%) 薄层电阻:430-800Ω/平方
World's largest size h-BN crystals are available! Our h-BN crystals now measure 5-6 mm in size much comparable to other traditional layered crystals. After 3 years of research and engineering
六方氮化硼晶体20片装 hBN(Hexagonal Boron Nitride)-Crystal 晶体尺寸:~1mm 电学性能:绝缘体/半导体 晶体结构:六边形 晶胞参数:a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120° 晶体类型:合成 晶体纯度:
高纯度黑磷晶体 Black Phosphorus-Crystal 晶体结构:正斜方晶结构晶体尺寸:~10mm 电学性能:半导体 晶体结构:斜方晶系 晶胞参数:a = 0.331 nm, b= 1.048, c = 0.437 nm, α = β = γ = 90° 晶体类型:合成 晶体纯度:99.995% 性质:半导体