单层氧化石墨烯（H法/进口） Single Layer Graphene Oxide (H Method) 制备方法：改良的H法 直径：1~5um 厚度：0.8~1.2nm 单层比：99% 纯度：99% 堆积密度：0.44g/cm3 体积密度：为0.26g/cm3

氧化石墨烯（S法/进口） Graphene Oxide (S Method) 制备方法：斯托登梅尔方法 外观为灰绿色粉末 直径：1~5um 厚度：0.8~1.2nm 比表面积（SSA）5-10平方米/克 单层比：＞90% 氧含量:~35 wt% 堆积密度：0.013g/cm3 体积密度：0.008g/cm3 XPS评估结果（元素重量比） C1s: 65.71% N1S: 0.5% O1s: 33.

氧化石墨烯（S法/进口） Graphene Oxide (S Method) 制备方法：斯托登梅尔方法 外观为灰绿色粉末 直径：1~5um 厚度：0.8~1.2nm 比表面积（SSA）5-10平方米/克 单层比：＞90% 氧含量:~35 wt% 堆积密度：0.013g/cm3 体积密度：0.008g/cm3 XPS评估结果（元素重量比） C1s: 65.71% N1S: 0.5% O1s: 33.

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density

Carboxyl (-COOH) functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.